Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

Analysis and optimisation of grooved parallel slider bearings with cavitation

Meccanica - This paper introduces an analytical approach to optimize the textured bearing with cavitation to improve the load support. For this purpose, a grooved parallel slider bearing is...     

基于局部加密纯无网格法非线性Cahn-Hilliard方程的模拟

为数值求解描述不同物质间相位分离现象的高阶非线性Cahn-Hilliard(C-H)方程,发展了一种基于局部加密纯无网格有限点集法(local refinement finite pointset method,LR-FPM).其构造过程为:1)将C-H方程中四阶导数降阶为两个二阶导数,连续应用基于Taylor展开和加权最小二乘法的FPM离散空间导数;2)对区域进行局部加密和采用五次样条核函数以提高数值精度;3)局部线性方程组求解中准确施加含高阶导数Neumann边值条件.随后,运用LR-FPM求解有解析解的一维/二维C-H方程,分析粒子均匀分布/非均匀分布以及局部粒子加密情况的误差和收敛阶,展示了LR-FPM较网格类算法在非均匀布点情况下的优点.最后,采用LR-FPM对无解析解的一维/二维C-H方程进行了数值预测,并与有限差分结果相比较.数值结果表明,LR-FPM方法具有较高的数值精度和收敛阶,比有限差分法更易数值实现,能够准确展现不同类型材料间相位分离非线性扩散现象随时间的演化过程.     

Boron(iii) β-diketonate-based small molecules for functional non-fullerene polymer solar cells and organic resistive memory devices

A class of acceptor–donor–acceptor chromophoric small-molecule non-fullerene acceptors, 1–4, with difluoroboron(iii) β-diketonate (BF₂bdk) as the electron-accepting moiety has been developed. Through the variation of the central donor unit and the modification on the peripheral substituents of the terminal BF₂bdk acceptor unit, their photophysical and electrochemical properties have been systematically studied. Taking advantage of their low-lying lowest unoccupied molecular orbital energy levels (from −3.65 to −3.72 eV) and relatively high electron mobility (7.49 × 10⁻⁴ cm² V⁻¹ s⁻¹), these BF₂bdk-based compounds have been employed as non-fullerene acceptors in organic solar cells with maximum power conversion efficiencies of up to 4.31%. Moreover, bistable resistive memory characteristics with charge-trapping mechanisms have been demonstrated in these BF₂bdk-based compounds. This work not only demonstrates for the first time the use of a boron(iii) β-diketonate unit in constructing non-fullerene acceptors, but also provides more insights into designing organic materials with multi-functional properties.

Boron(iii) β-diketonates have been demonstrated to serve as multi-functional materials in NFA-based OPVs and organic resistive memories.     

拉格朗日中值定理在方程有根证明题中的应用

对微分中值定理证明方程有根的题型作了分类,分析并讨论了证明中的技巧,及证明中所采用的方法,并对不同例子进行了相应的拓展.